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| 17.0-24.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1000-BD Chip Device Layout Features High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 P1000 Mimix Broadband's two stage 17.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and www..com provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 700 mA +0.3 VDC +9.0 dBm -65 to +165 OC -55 to MTTF Table 4 MTTF Table 4 (4) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6K ) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id) (Vd=5.5V, Vg=-0.5V Typical) Detector (diff ) Output at 20 dBm 3 (1) Measured at +16 dBm per tone output carrier level at 22 GHz. (2) Measured using constant current. (3) Measured with either Vd5=I.0V or Vd5=5.5V and Rd=5.6K . Units GHz dB dB dB dB dB dBm dBm VDC VDC mA VDC Min. 17.0 +35.0 -1.0 - Typ. 20.0 20.0 19.0 +/-1.0 40.0 +25.0 +36.0 +5.5 -0.5 430 0.28 Max. 24.0 +5.6 0.0 650 - Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-24.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1000-BD Power Amplifier Measurements XP1000-BD Vd1,2,3,4=5.5 V Id1,2,3,4=430 mA 25 20 Gain (dB) 15 10 5 0 -5 14.0 0 Reverse Isolation (dB) -10 -20 -30 -40 -50 -60 27.0 Input Return Loss (dB) 0 -5 -10 -15 -20 -25 -30 -35 -40 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 -45 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 XP1000-BD Vd1,2,3,4=5.5 V Id1,2,3,4=430 mA 0 Output Return Loss (dB) -5 -10 -15 -20 -25 -30 -35 -40 -45 26.0 27.0 Frequency (GHz) S21 Avg S12 Avg Frequency (GHz) S11 Avg S22 Avg XP1000-BD Vd1,2,3,4=5.5 V Id1,2,3,4=430 mA 30 29 Output Power P1dB (dBm) 28 27 26 25 24 23 22 21 20 18 20 22 Frequency (GHz) 24 26 XP1000-BD Vd1,2,3,4=5.5 V Id1,2,3,4=430 mA 44 42 40 OIP3 (dBm) 38 36 34 32 30 28 26 17 18 19 20 21 22 23 24 Frequency (GHz) Min Avg Max Std Dev 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 XP1000-BD Vd1,2,3,4=5.5 V Id1,2,3,4=430 mA Frequency=22.0 GHz 40 39 38 37 36 35 34 33 32 31 30 9 10 11 12 13 14 15 16 17 Output Power per tone (dBm) Min Avg Max Std Dev 1.25 1 0.75 0.5 0.25 0 OIP3 (dBm) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 2 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-24.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1000-BD 0.467 (0.018) 0.866 (0.034) 1.267 (0.050) 1.867 (0.074) Mechanical Drawing 2.500 (0.099) 2 3 4 5 6 2.184 (0.086) 1.791 (0.071) 1 P1000 13 0.0 0.0 0.467 (0.018) 12 11 10 9 8 7 0.866 (0.034) 1.267 (0.050) 1.867 (0.074) 2.967 (0.117) 3.368 (0.133) 3.560 (0.140) (Note: Engineering designator is 21PAMP_05B) 3.167 (0.125) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.003 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All Bond Pads are 0.100 x 0.100 (0.004 x 0.004). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 5.524 mg. Bond Pad #1 (RF In) Bond Pad #5 (Vd2) Bond Pad #8 (Vd5) Bond Pad #11 (Vg4) Bond Pad #2 (Vg1) Bond Pad #6 (RF Out) Bond Pad #9 (V1 Out) Bond Pad #12 (Vd3) Bond Pad #3 (Vd1) Bond Pad #7 (V2 Out) Bond Pad #10 (Vd4) Bond Pad #13 (Vg3) Bond Pad #4 (Vg2) Bias Arrangement Vd1,2 Vg1,2 2 3 4 5 6 Bypass Capacitors - See App Note [3] Vd1,2 Vg1,2 RF Out 1 RF In RF Out P1000 XP1000-BD RF In V2 Out 13 12 11 10 9 8 7 V2 Out Vd5 Vg3,4 Vd3,4 Rd V1 Out Vg3,4 Vd3,4 Vd5 V1 Out Page 3 of 6 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-24.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1000-BD Detector Curves Typical Detector Characteristic 0.350 1.000 (LOG) Typical Detector Characteristic Detector Diff. Output, V 0.300 0.250 0.200 0.150 0.100 0.050 0.000 12 Detector Diff. Output, V 0.100 0.010 - - - - - - - - 21 0.001 23 12 13 14 15 16 17 18 19 20 21 22 13 14 15 16 17 18 19 20 22 23 Total Output Power, dBm 2 tones each at 3dB below total output Total Output Power, dBm 2 tones each at 3dB below total output App Note [1] Biasing - As shown in the bonding diagram, it is recommended to separately bias the upper and lower amplifiers at Vd(1+2)=5.5V Id(1+2)=215mA, and Vd(3+4)=5.5V Id(3+4)=215mA, although best performance will result in separately biasing Vd1 through Vd4, with Id1=Id3=71mA, Id2=Id4=144mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. App Note [2] On-board Detector - The output signal of the power amplifier is coupled via a 15dB directional coupler to a detector, which comprises a diode connected to the signal path, and a second diode used to provide a temperature compensation signal. The common bias terminal is Vd5, and is nominally set to forward bias both diodes. The bias is normally provided in 1 of 2 ways. The Vd5 port can be connected directly to a 1V bias, and given the internal series resistance, results in about 1mA of bias current. Alternatively, Vd5 can be tied to the same voltage as Vd1-Vd4 through an external series resistor Rd in the range 3 - 6k . App Note [3] Bias Arrangement For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are tied together) of DC bias pads. For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2,3,4 and Vg1,2,3,4)needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended. MTTF Table These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry. Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius Channel Temperature 127 deg Celsius 147 deg Celsius 167 deg Celsius Rth MTTF Hours FITs 30.1 C/W - 9.11E+08 1.03E+08 1.42E+07 1.70E+00 9.71E+00 7.04E+01 Bias Conditions: Vd1=Vd2=Vd3=Vd4=5.5V, Id1=Id3=71 mA, Id2=Id4=144 mA Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 4 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-24.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1000-BD Vd2 Vd1 Vg1 R=100.0 R=600.0 RF Out R=50.0 R=10.0 R=600.0 Vg2 R=100.0 R=5.0 Device Schematic R=50.0 RF In R=50.0 R=600.0 R=600.0 R=100.0 Vg3 R=10.0 Vd3 R=100.0 R=5.0 Vd4 R=200.0 R=15.0 R=1K R=100.0 Vg4 R=100.0 R=1K Vout2 R=50.0 R=200.0 Vout1 Typical Application XU1000-BD WG Sideband Reject XB1004-BD XP1000-BD Vd5 IF IN 2 GHz RF Out 17.7-19.7 GHz LO(+12dBm) 15.7-17.7 GHz (USB Operation) 19.7-21.7 GHz (LSB Operation) On-Chip Temp Comp Detector Mimix Broadband MMIC-based 17.0-24.0 GHz Transmitter Block Diagram (Changing LO and IF frequencies as required allows design to operate as high as 24 GHz) Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 5 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. 17.0-24.0 GHz GaAs MMIC Power Amplifier May 2007 - Rev 02-May-07 P1000-BD Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not ingest. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C +/- 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Ordering Information Part Number for Ordering XP1000-BD-000V XP1000-BD-000W XP1000-BD-EV1 Description Where "V" is RoHS compliant die packed in vacuum release gel paks Where "W" is RoHS compliant die packed in waffle trays XP1000 die evaluation module Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 6 of 6 Characteristic Data and Specifications are subject to change without notice. (c)2007 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. |
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